n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents
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Data
2016-11-02
Autores
Magan, Caio Malingre [UNESP]
Martino, Joao Antonio
Simoen, Eddy
Claeys, Cor
De Andrade, Maria Gloria Cano [UNESP]
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Resumo
In this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (Ig) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in linear and saturation regions. The results indicate that Bulk FinFETs present lower gate leakage currents than DTMOS FinFETs. In addition, an opposite IG behavior of those devices was observed when the channel lengths change. On the other hand, for long channels FinFETs the GIDL effect is lower in devices with DTMOS configuration because the benefit of DTMOS operation becomes higher.
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Bulk, DTMOS, GIDL, IG, leakage current
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SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.