Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode
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Data
2017-11-01
Autores
Albano, Luiz G.S. [UNESP]
Boratto, Miguel H. [UNESP]
Nunes-Neto, Oswaldo [UNESP]
Graeff, Carlos F.O. [UNESP]
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Resumo
We report on low voltage and high frequency vertical organic field-effect transistors (VOFETs) using silver nanowires (AgNWs) as intermediate grid electrode (source) deposited through Mayer rod-coating. The optimized AgNWs electrodes deposited on insulator surface followed by low thermal annealing have sheet resistance of ∼30 Ω/sq and surface roughness of 70 ± 20 nm. Crosslinked poly(vinyl alcohol) is used as gate insulator and C60 fullerene as n-type channel semiconductor. Our VOFETs have high output current density of 2.5 mA/cm2 and on/off ratio of 5 × 103 with supply voltages up to 2 V. A fast switching performance of sub-1 μs at frequency gate modulation of 0.13 MHz is demonstrated. Moreover, our devices are produced based on low-cost methods compatible with industrial-scale production of organic electronics.
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Palavras-chave
Mayer rod-coating, Silver nanowires, Transparent conductive electrodes, Vertical FETs, Vertical organic transistor
Como citar
Organic Electronics: physics, materials, applications, v. 50, p. 311-316.