Experimental Analysis of Differential Pairs Designed with Line Tunnel FET Devices
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Data
2017-01-01
Autores
Martino, M. D. V.
Martino, J. A.
Agopian, P. G. D. [UNESP]
Rooyackers, R.
Simoen, E.
Collaert, N.
Claeys, C.
IEEE
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Título de Volume
Editor
Ieee
Resumo
The aim of this work is to study, for the first time, the behavior of differential pair circuits designed with Line TFETs and compare the suitability of this technology with alternatives such as FinFETs and Point TFETs. The first part highlights experimental characteristics of individual Line TFET transistors, which present similar transconductance and better output conductance when compared to FinFETs, while revealing better transconductance and worse output conductance in comparison to Point TFETs. Next, the experimental data for Line TFET differential pairs is presented for different bias conditions and dimensions. The last part compares the intrinsic voltage gain (A(d)), the compliance voltage and susceptibility to channel length mismatch for the 3 technologies. It is explained that Line TFET presents the highest A(d), FinFETs provides a wider operation region and Point TFETs are the least susceptible to channel length variations.
Descrição
Palavras-chave
Line TFET, Point TFET, FinFET, Differential Pair, differential gain, dimensions mismatch
Como citar
2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.