DC method for self-heating estimation applied to FinFET
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Data
2018-10-26
Autores
Mori, C. A.B. [UNESP]
Agopian, P. G.D.
Martino, J. A.
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Resumo
This paper reports an extension on the application of the DC method for the estimation of self-heating effects from planar to FinFET devices, verified through theoretical considerations and numerical simulations. In the worst case, a difference of 5.6% was observed on the estimation of the transistors channel temperature when compared to a traditional method.
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FinFET, Self-heating effect, Semiconductor-On-Insulator
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33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.