Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor
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Data
2019-01-01
Autores
Mori, Carlos A. B.
Agopian, Paula G. D. [UNESP]
Martino, Joao A.
IEEE
Título da Revista
ISSN da Revista
Título de Volume
Editor
Ieee
Resumo
In this work we propose for the first time the use of the recently introduced UTBB (SOI)-S-BE TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept.
Descrição
Palavras-chave
Silicon-On-Insulator (SOI), Tunnel-FET, MOSFET, Reconfigurable transistor, dual technology transistor
Como citar
2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.