Publicação: UV-Assisted Annealing Effect on the Performance of an Electrolyte-Gated Transistor Based on Inkjet Printed ZnO Nanoparticles Blended With Zinc Nitrate
Carregando...
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Artigo
Direito de acesso
Resumo
Solution-processed devices are in general compatible with flexible and conformable electronics. However, some promising materials needs to be processed at high temperatures, which limits the applications and the use of different substrates. Among these materials we can highlight zinc oxide (ZnO), a semiconductor that stands out for transistors applications and is, in general, obtained at temperatures around 300 °C-400 °C. Here, we reported the combination of annealing at 150 °C, ultraviolet (UV) treatment and blending of ZnO nanoparticles (ZnO-NPs) with zinc nitrate and urea as a strategy to fabricate an inkjet printed electrolyte-gated transistor (EGT) with reduced temperature and improved performance, including a significant mobility improvement to 0.21 cm²/V·s, operating below 2 V bias, which is around 460% higher than the mobility of the EGT fabricated purely with ZnO-NPs.
Descrição
Palavras-chave
Annealing, Electrolyte-gated transistor (EGT), II-VI semiconductor materials, inkjet printing, Printing, Substrates, Transistors, ultraviolet (UV)-assisted annealing, Zinc, Zinc oxide, zinc oxide (ZnO).
Idioma
Inglês
Como citar
IEEE Transactions on Electron Devices.
