Amorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperature
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Data
2000-01-01
Autores
Leite, E. R.
Pontes, F. M.
Paris, E. C.
Paskocimas, C. A. [UNESP]
Lee, E. J.H.
Longo, E.
Pizani, P. S.
Varela, J. A. [UNESP]
Mastelaro, V.
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Resumo
This paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol-gel-like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.
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Amorphous materials, Luminescence, Materials science, Semiconductors, Sol-gel process
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Advanced Functional Materials, v. 10, n. 6, p. 235-240, 2000.