XPS investigation of plasma-deposited polysiloxane films irradiated with helium ions
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Data
2007-05-23
Autores
Gelamo, Rogrio V.
Landers, Richard
Rouxinol, Francisco P. M.
Trasferetti, Beneditlo C.
Bica de Moraes, Mdrio A.
Davanzo, Celso U.
Durrant, Steven F.
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Título de Volume
Editor
Wiley-Blackwell
Resumo
This work describes an XPS investigation of plasma-deposited polysiloxane films irradiated with 170 keV He+ ions at fluences, Phi, ranging from 1 x 10(14) to 1 x 10(16) cm(-2). Modifications in the atomic concentrations of the surface atoms with (D were revealed by changes in the [O]/[Si], [O]/[C] and [C]/[Si] atomic ratios. Surface chemical structure modifications were evidenced by the increasing C1s peak width and asymmetry as Phi was increased, due to the formation of ether and carboxyl functionalities. Moreover, structural transformations were indicated by the positive binding energy shift of the Si2p peaks, due to the increasing Si oxidation. Correlations of the XPS data with other results from previous work on polysiloxanes illustrate the role of ion beam-induced bond breaking on the structural modifications.
Descrição
Palavras-chave
chemical structure, hexamethyldisiloxane (HMDSO), ion irradiation, polysiloxane, plasma enhanced chemical vapor deposition (PECVD), X-ray photoelectron spectroscopy (XPS)
Como citar
Plasma Processes and Polymers. Weinheim: Wiley-v C H Verlag Gmbh, v. 4, n. 4, p. 482-488, 2007.