Optical characterization of cubic AlGaN/GaN quantum wells

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2002-07-16

Autores

Kohler, U.
As, D. J.
Potthast, S.
Khartchenko, A.
Lischka, K.
Noriega, O. C.
Meneses, E. A.
Tabata, A.
Rodrigues, SCP
Scolfaro, LMR

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Wiley-Blackwell

Resumo

Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements were employed to characterize the structural and optical properties of GaN/AlxGa1-xN Multi Quantum Well (MQW) structures, in which both Aluminum content and well widths were varied. The observed quantized states are in agreement with first-principles based theoretical calculations.

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Physica Status Solidi A-applied Research. Weinheim: Wiley-v C H Verlag Gmbh, v. 192, n. 1, p. 129-134, 2002.

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