Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
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Data
1999-04-01
Autores
Tabata, A.
Lima, A. P.
Leite, JR
Lemos, V
Schikora, D.
Schottker, A.
Kohler, U.
As, D. J.
Lischka, K.
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Iop Publishing Ltd
Resumo
Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface.
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Semiconductor Science and Technology. Bristol: Iop Publishing Ltd, v. 14, n. 4, p. 318-322, 1999.