Helium ion irradiation of polymer films deposited from TMS-Ar plasmas
Nenhuma Miniatura disponível
Data
2007-05-23
Autores
Gelamo, Rogerio V.
Durrant, Steven F.
Trasferetti, Benedito C.
Davanzo, Celso U.
Rouxinol, Francisco P. M.
Bica de Moraes, Mdrio A.
Título da Revista
ISSN da Revista
Título de Volume
Editor
Wiley-Blackwell
Resumo
Polymer films synthesized from plasmas of a tetramethylsilane - Ar mixture were modified by irradiation with 170 keV He ions at fluences ranging from 1 x 10(14) to 1 x 10(16) cm(-2). As revealed by infrared spectroscopy, the ion beam produced intense bond rearrangements, such as the depletion of bonding groups (C-H and Si-H), and induced the formation of new ones, such as O-H and Si-O. From the nanoindentation measurements, a remarkable increase in the surface hardness of the films was observed as the ion fluence was increased. The increases in hardness were accompanied by an increase in the film compaction as shown by using a combination of RBS and film thickness measurements. From both hardness and infrared measurements A was concluded that, under the He ion bombardment, the polymer structure is transformed into a silicon oxycarbide network.
Descrição
Palavras-chave
hardness, infrared reflection-absorption spectroscopy (IRRAS), ion irradiation, plasma polymerization, Rutherford backscattering spectroscopy (RBS), tetramethylsilane
Como citar
Plasma Processes and Polymers. Weinheim: Wiley-v C H Verlag Gmbh, v. 4, n. 4, p. 489-496, 2007.