Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers
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Data
2004-05-01
Autores
Boselli, M. A.
Lima, ICD
Ghazali, A.
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Editor
Elsevier B.V.
Resumo
The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, establishing a self-consistency between the magnetic order and the electronic structure. The Curie-Weiss temperatures calculated for these low-dimensional systems are in the range of 50-80 K, and the dependence of the transition temperature with the GaAs separation layer is established. (C) 2003 Published by Elsevier B.V.
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diluted magnetic semiconductor, (Ga,Mn)As, spintronics
Como citar
Journal of Magnetism and Magnetic Materials. Amsterdam: Elsevier B.V., v. 272, p. 351-352, 2004.