Microstructure and electrical properties of perovskite (Pb, La)TiO3 thin film deposited at low temperature by the polymeric precursor method
Nenhuma Miniatura disponível
Data
2001-07-01
Autores
Pontes, F. M.
Rangel, JHG
Leite, E. R.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Araujo, E. B.
Eiras, J. A.
Título da Revista
ISSN da Revista
Título de Volume
Editor
Kluwer Academic Publ
Resumo
High-quality (Pb, La)TiO3 ferroelectric thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. The X-ray diffraction patterns show that the films are polycrystalline in nature. This method allows for low temperature (500 degrees C) synthesis, a high quality microstructure and superior dielectric properties. The effects on the microstructure and electrical properties were studied by changing the La content. The films annealed at 500 degreesC have a single perovskite phase with only a tetragonal or pseudocubic structure. As the La content is increased, the dielectric constant of PLT thin films increases from 570 up to 1138 at room temperature. The C-V and P-E characteristics of perovskite thin films prepared at a low temperature show normal ferroelectric behavior, representing the ferroelectric switching property. The remanent polarization and coercive field of the films deposited decreased due to the transformation from the ferroelectric to the paraelectric phase with an increased La content. (C) 2001 Kluwer Academic Publishers.
Descrição
Palavras-chave
Como citar
Journal of Materials Science. Dordrecht: Kluwer Academic Publ, v. 36, n. 14, p. 3565-3571, 2001.