The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors
Nenhuma Miniatura disponível
Data
2004-11-15
Autores
Souza, ECF
Simoes, A. Z.
Cilense, M.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Título da Revista
ISSN da Revista
Título de Volume
Editor
Elsevier B.V.
Resumo
Pure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved.
Descrição
Palavras-chave
PZT, Nb doped PZT, FERAM, polymeric precursor
Como citar
Materials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 88, n. 1, p. 155-159, 2004.