Phase separation suppression in InGaN epitaxial layers due to biaxial strain
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Data
2002-02-04
Autores
Tabata, A.
Teles, L. K.
Scolfaro, LMR
Leite, JR
Kharchenko, A.
Frey, T.
As, D. J.
Schikora, D.
Lischka, K.
Furthmuller, J.
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American Institute of Physics (AIP)
Resumo
Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.
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Applied Physics Letters. Melville: Amer Inst Physics, v. 80, n. 5, p. 769-771, 2002.