Structural and electrical properties of SrBi2(Ta0.5Nb0.5)(2)O-9 thin films
Nenhuma Miniatura disponível
Data
2008-06-30
Autores
Amsei Junior, N. L. [UNESP]
Simões, Alexandre Zirpoli [UNESP]
Pianno, R. F. C. [UNESP]
Zanetti, S. M.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Título da Revista
ISSN da Revista
Título de Volume
Editor
Elsevier B.V. Sa
Resumo
SrBi2(Ta0.5Nb0.5)(2)O-9 (SBTN) thin films were obtained by polymeric precursor method on Pt/Ti/SiO2/Si(1 0 0) substrates. The film is dense and crack-free after annealing at 700 degrees C for 2 h in static air. Crystallinity and morphological characteristic were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM). The films displayed rounded grains with a superficial roughness of 3.5 nm. The dielectric permittivity was 122 with loss tangent of 0.040. The remanent polarization (P-r) and coercive field (E-c) were 5.1 mu C/cm(2) and 96 kV/cm, respectively. (C) 2007 Published by Elsevier B.V.
Descrição
Palavras-chave
ferroelectric, chemical synthesis, thin films, nanostructures
Como citar
Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 458, n. 1-2, p. 500-503, 2008.