Piezoelectric behavior of SrRuO(3) buffered lanthanum modified bismuth ferrite thin films grown by chemical method
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Data
2008-10-06
Autores
Simões, Alexandre Zirpoli [UNESP]
Gonzalez, A. H. M. [UNESP]
Aguiar, E. C. [UNESP]
Riccardi, C. S. [UNESP]
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
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American Institute of Physics (AIP)
Resumo
Lanthanum modified bismuth ferrite thin film (BLFO) of pure perovskite phase was deposited on SrRuO(3)-buffered Pt/TiO(2)/SiO(2)/Si (100) substrates by soft chemical method. (111)-preferred oriented BLFO film was coherently grown at a temperature of 500 degrees C. The crystal structure of the film was characterized by using x-ray diffraction. The spontaneous polarization of the film was 25 mu C/cm(2). The film has a piezoelectric coefficient d(33) equal to 85 pm/V and a weak pulse width dependence indicating intrinsic ferroelectricity. Retention measurement showed no decay of polarization while piezoelectric response was greatly improved by the conductor electrode. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2979692]
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Applied Physics Letters. Melville: Amer Inst Physics, v. 93, n. 14, p. 3, 2008.