Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications
Carregando...
Data
1999-05-01
Autores
Foschini, C. R.
Joshi, P. C.
Varela, José Arana [UNESP]
Desu, S. B.
Título da Revista
ISSN da Revista
Título de Volume
Editor
Resumo
We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.
Descrição
Palavras-chave
Annealing, Barium compounds, Capacitors, Crystal structure, Crystallization, Deposition, Dynamic random access storage, Insulating materials, Leakage currents, Permittivity, Phase transitions, Thin films, Chemical solution deposition, Orthorhombic phase, Dielectric films
Como citar
Journal of Materials Research, v. 14, n. 5, p. 1860-1864, 1999.