Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources
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Data
1999-12-01
Autores
Messias, Fabio R.
Scalvi, Luis V.A. [UNESP]
Siu Li, M.
Santilli, C. V. [UNESP]
Pulcinelli, S. H. [UNESP]
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Resumo
Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
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Oxygen, Photoconductivity, Sol-gel, Tin dioxide, Vacancy, Coating techniques, Composition, Electric properties, Electron transitions, Metal vapor lamps, Oxides, Sol-gels, Thin films, Tin compounds, Dip coating sol-gel technique, Oxygen vacancies, Photoconductivity dependence, Crystal defects
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Radiation Effects and Defects in Solids, v. 150, n. 1-4, p. 391-395, 1999.