Effect of thermal treatment on the morphology of PLZT thin films prepared from polymeric precursor method
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2001-01-01
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Lead lanthanum zirconate titanate (PLZT) thin films with (9/65/35) stoichiometry were prepared by dip coating from polymeric precursor method. The films deposited on silicon (100) substrates, were thermally treated from 450° to 700°C for 6 hours in order to study the influence of thermal treatment on the crystallinity, microstructure, grain size and roughness of the final film. X-ray diffraction results showed that PLZT phase crystallizes at low temperature (500°C) and present preferential orientation. It was observed by scanning electron microscopy (SEM) that it is possible to obtain dense thin films at temperatures around 650°C. The atomic force microscopy (AFM) studies showed that the grain size and roughness are strongly influenced by the annealing temperature.
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Annealing, Atomic force microscopy, Crystal microstructure, Crystal orientation, Grain size and shape, Lead compounds, Scanning electron microscopy, Stoichiometry, Surface roughness, X ray diffraction analysis, Crystallinity, Lead lanthanum zirconate titanate, Thin films
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Key Engineering Materials, v. 189-191, p. 155-160, 2001.