Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields
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Data
2008-03-01
Autores
Bruno-Alfonso, A. [UNESP]
Porras-Montenegro, N.
Reyes-Gómez, E.
Oliveira, L. E.
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Resumo
We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined effects of non-parabolicity, anisotropy and spin-splitting terms are taken into account. Theoretical results are given as functions of the QW width and compared with available experimental data and previous theoretical works. © 2007 Elsevier B.V. All rights reserved.
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Palavras-chave
Dresselhaus, Quantum well, Rashba, Spin-splitting, Anisotropy, Electrons, Magnetic fields, Dresselhaus spin-splitting, Electron g factor, Semiconductor quantum wells
Como citar
Physica E: Low-Dimensional Systems and Nanostructures, v. 40, n. 5, p. 1464-1466, 2008.