Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films
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Data
2012-10-31
Autores
Araújo, E. B. [UNESP]
Lima, E. C. [UNESP]
Bdikin, I. K.
Kholkin, A. L.
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Resumo
Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the filmsubstrate interface are not primarily responsible for the observed self-polarization effect in our films. © 2012 IEEE.
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Palavras-chave
piezoresponse, PZT thin films, self-polarization, Chemical method, Dielectric and piezoelectric properties, Film-substrate interfaces, Lead zirconate titanate, Mechanical coupling, Nano scale, Perovskite phase, Perovskite phasis, Piezoelectric property, Piezoresponse, Polycrystalline, Pt(111), Pyrochlores, PZT, PZT film, PZT thin film, Schottky barriers, Thickness dependence, Ferroelectric ceramics, Lead, Nanotechnology, Perovskite, Platinum, Polarization, Polymeric films, Schottky barrier diodes, Semiconducting lead compounds, Substrates, Thin films, Zirconium, Interfaces (materials)
Como citar
Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012.