CaCu3Ti4O12 thin films with non-linear resistivity deposited by RF-sputtering
Nenhuma Miniatura disponível
Data
2013-07-11
Autores
Foschini, C. R. [UNESP]
Tararam, R. [UNESP]
Simões, A. Z. [UNESP]
Cilense, M. [UNESP]
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Título da Revista
ISSN da Revista
Título de Volume
Editor
Resumo
Calcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ±0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO 4], [CuO11], [CuO11Vx 0] and [TiO5.VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. © 2013 Elsevier B.V. All rights reserved.
Descrição
Palavras-chave
Chemical synthesis, Electron microscopy, Thin films, X-ray diffraction, Calcium copper titanates, Conventional furnace, Cubic structure, Dielectric permittivities, Interfacial barriers, Polycrystalline, Room temperature, Secondary phasis, Dielectric losses, Permittivity, Synthesis (chemical), X ray diffraction
Como citar
Journal of Alloys and Compounds, v. 574, p. 604-608.