Red shift and higher photoluminescence emission of CCTO thin films undergoing pressure treatment

Nenhuma Miniatura disponível

Data

2014-01-01

Autores

Sequinel, T. [UNESP]
Garcia, I. G. [UNESP]
Tebcherani, S. M.
Kubaski, E. T.
Oliveira, L. H. [UNESP]
Siu Li, M.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]

Título da Revista

ISSN da Revista

Título de Volume

Editor

Resumo

CCTO thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si substrates using a chemical (polymeric precursor) and pressure method. Pressure effects on CCTO thin films were evaluated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and optical properties which revealed that a pressure film (PF) is denser and more homogeneous than a chemical film (CF). Pressure also causes a decrease in the band gap and an increase in the photoluminescence (PL) emission of CCTO films which suggests that the pressure facilitates the displacement of Ti in the titanate clusters and the charge transference from TiO6 to [TiO5V0z], [TiO5V0z] to [CaO11V0z] and [TiO5V0z] to [CuO4]x. © 2013 Elsevier B.V. All rights reserved.

Descrição

Palavras-chave

CCTO, Photoluminescence, Pressure method, Thin films

Como citar

Journal of Alloys and Compounds, v. 583, p. 488-491.