Ferroelectric and piezoelectric properties of bismuth layered thin films grown on (100) Pt electrodes
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Data
2008-01-21
Autores
Simões, Alexandre Zirpoli [UNESP]
Riccardi, C. S. [UNESP]
Ries, A. [UNESP]
Ramirez, M. A. [UNESP]
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
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ISSN da Revista
Título de Volume
Editor
Elsevier B.V. Sa
Resumo
The effect of film orientation on piezoelectric and ferroelectric properties of bismuth layered compounds deposited on platinum coated silicon substrates was investigated. Piezo-force microscopy was used to probe the local piezoelectric properties of Bi(4)Ti(3)O(12), CaBi(4)Ti(4)O(15) and SrBi(4)Ti(4)O(15) films. Our measurements on individual grains clearly reveal that the local piezoelectric properties are determined by the polarization state of the grain. A piezoelectric coefficient of 65 pm/V was attained after poling in a grain with a polar axis very close to the normal direction. The piezoelectric coefficient and the remanent polarization were larger for a-b axes oriented than for c-axis-oriented films. (c) 2007 Elsevier B.V All rights reserved.
Descrição
Palavras-chave
ferroelectricity, thin-film, piezoelectricity
Como citar
Journal of Materials Processing Technology. Lausanne: Elsevier B.V. Sa, v. 196, n. 1-3, p. 10-14, 2008.