Filmes orgânicos contendo óxido de alumínio depositados a plasma
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Data
2011-06-20
Autores
Nielsen, Guilherme Fernandes [UNESP]
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Editor
Universidade Estadual Paulista (Unesp)
Resumo
Filmes finos de alumina vêm sendo amplamente estudados em função de suas propriedades físicas e químicas. Em aplicações industriais, filmes de alumina são utilizados, por exemplo, em ferramentas de corte e em circuitos microeletrônicos. Neste trabalho empregou-se o processo de PECVD (do inglês, Plasma Enhanced Chemical Vapor Deposition) para sintetizar fimes contendo óxido de alumínio. Os filmes foram depositados a partir de plasmas excitados por radiofrequencia (13,56 MHz) em misturas de acetilacetonato de alumínio e argônio. Uma configuração experimental inédita foi empregada para permitir a incorporação de alumínio nos filmes: o pó do organometálico foi colocado diretamente no eletrodo por onde um plasma de argônio foi excitado. A pulverização catódica aliada a sublimação do organometálico faz com que haja, em determinadas condições, a deposição de filmes contendo alumina. Foram avaliados os efeitos da pressão do plasma e da potência do sinal de excitação nas propriedades dos filmes resultantes. A técnica de perfilometria foi utilizada para determinar a espessura da camada depositada. Difração de raios X (DRX), com a incidência de ângulos rasantes, foi empregada para investigar a estrutura do material. As técnicas de espectroscopia de absorção no infravermelho por transformada de Fourier (FTIR) e espectroscopia de energia dispersiva (EDS) foram respectivamente utilizadas para analisar a estrutura e a composição química dos filmes. A morfologia das amostras preparadas sobre aço-inoxidável foi analisada por microscopia eletrônica de varredura (MEV) enquanto a dureza foi avaliada por nanoindentação. Foram obtidos filmes amorfos com espessuras de até 7 μm que contêm carbono, alumínio, oxigênio e hidrogênio. Observou-se que as proporções de alumínio e carbono são altamente dependentes da energia cinética dos íons presentes no plasma...
Recently aluminium oxide thin films have been widely studied due to their important physical and chemical properties. Depositions in cutting tools and in microelectronic circuits are examples of industrial applications of industrial applications of aluminum oxide films. In this work, alumina-containing films were prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition) using a new configuration of the plasma system; the metalorganic powder was placed directly on the powered electrode while the substrates were mounted on the grounded topmost electrode. The plasma was excited by applying radiofrequency (13.56 MHz) power to the lower electrode in an argon atmosphere. The sputtering combined with the sublimation of organometallic compound enabled the growth of an alumina-containing organic layer. The effect of the plasma excitation parameters on the properties of the resulting films was studied. Film thickness was measured using profilometry. Grazing angle incidence X-ray diffractometry (GAXRD) was used to determine the structure of the films. Fourier trasnform Infrared Spectroscopy (FTIR) and energy dispersive spectroscopy (EDS) techniques were used to analyze chemical structure and coposition, respectively. The surface morphology was analyzed by scanning electron microscopy (SEM) while film hardness was evaluated by nanoindentation Amorphous organic films were deposited with thicknesses of up to 7 μm. The films were composed of aluminum, carbon, oxygen and hydrogen, the proportions of carbon and aluminum being strongly dependent on the kinetic energy of the ions. The film surface was uniform but presented particulares and, in some cases, wrinkles. The proportion of such defects depends on the plasma excitation parameters
Recently aluminium oxide thin films have been widely studied due to their important physical and chemical properties. Depositions in cutting tools and in microelectronic circuits are examples of industrial applications of industrial applications of aluminum oxide films. In this work, alumina-containing films were prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition) using a new configuration of the plasma system; the metalorganic powder was placed directly on the powered electrode while the substrates were mounted on the grounded topmost electrode. The plasma was excited by applying radiofrequency (13.56 MHz) power to the lower electrode in an argon atmosphere. The sputtering combined with the sublimation of organometallic compound enabled the growth of an alumina-containing organic layer. The effect of the plasma excitation parameters on the properties of the resulting films was studied. Film thickness was measured using profilometry. Grazing angle incidence X-ray diffractometry (GAXRD) was used to determine the structure of the films. Fourier trasnform Infrared Spectroscopy (FTIR) and energy dispersive spectroscopy (EDS) techniques were used to analyze chemical structure and coposition, respectively. The surface morphology was analyzed by scanning electron microscopy (SEM) while film hardness was evaluated by nanoindentation Amorphous organic films were deposited with thicknesses of up to 7 μm. The films were composed of aluminum, carbon, oxygen and hydrogen, the proportions of carbon and aluminum being strongly dependent on the kinetic energy of the ions. The film surface was uniform but presented particulares and, in some cases, wrinkles. The proportion of such defects depends on the plasma excitation parameters
Descrição
Palavras-chave
Filmes finos, Oxido de aluminio, Thin films, Aluminum Oxide, Aluminum Acetylacetonate
Como citar
NIELSEN, Guilherme Fernandes. Filmes orgânicos contendo óxido de alumínio depositados a plasma. 2011. 81 f. Dissertação (mestrado) - Universidade Estadual Paulista, Faculdade de Ciências, 2011.