UTBB FD-SOI MOSFET with SELBOX in DTMOS configuration
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Data
2022-12-31
Autores
Da Silva, Jeveson Cardoso [UNESP]
Martins, Everson [UNESP]
Junior, Nilton Graziono [UNESP]
De Andrade, Maria Glória Caño [UNESP]
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Resumo
For the first time, Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI) n-channel with Dynamic Threshold MOS configuration (DTMOS) using the SELBOX (Selective Buried OXide) sub-strate was analyzed. The drain and substrate current, transcon-ductance (gm) and Subthreshold Slope (SS) ware compared in the DTMOS mode and the standard biasing configuration for different gap width (WGAP) of SELBOX. Additionally, the out-put conductance and the transconductance gain also studied through numerical simulations. The results indicate that the SELBOX structure in DTMOS mode is competitive candidates for analog applications.
Descrição
Palavras-chave
Analog per-formance, DTMOS, SELBOX, UTBB SOI
Como citar
Journal of Integrated Circuits and Systems, v. 17, n. 3, 2022.