Estudo de transistores HEMT’s de AlGaN/GaN operando em baixas temperaturas
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Data
2023-05-25
Autores
Baptista Júnior, Braz [UNESP]
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Universidade Estadual Paulista (Unesp)
Resumo
O objetivo principal deste trabalho é estudar o desempenho de transistores de alta mobilidade eletrônica AlGaN/GaN HEMT, quando submetidos a baixas temperaturas de operação. Esta investigação foi desenvolvida a partir de dados experimentais coletados em laboratório do imec de um dispositivo experimental e pesquisas em livros e publicações acadêmicas de dispositivos AlGaN/GaN HEMT. Os achados analisadas foram medidas em baixas temperaturas, utilizando-se dispositivos com diferentes dimensões de comprimento (L) e largura (W) de canal. A partir dos dados coletados, foi possível obter diversos parâmetros dos dispositivos tais como, curvas características IDxVG, IDxVD, IGxVG, transcondutância, tensão de limiar (VT), DIBL (redução da barreira induzida pelo dreno), inclinação de sublimiar (SS), corrente de fuga de porta do dispositivo, condutância de saída (gD), tensão Early (VEA) e o ganho intrínseco de tensão (AV). A partir desses parâmetros verificamos desempenho e a resposta do dispositivo e uma determinada faixa de temperatura, que foram medidas em laboratório, bem como na influência que as alterações nas dimensões, podem trazer no desempenho dos dispositivos AlGaN/GaN HEMT. Estes transistores AlGaN/GaN HEMT foram fabricados sobre uma lâmina de silício de alta resistividade (SiHR) de 200mm com orientação cristalográfica (111). Os resultados analisados dos dispositivo AlGaN/GaN HEMT mostram que, devido a mudança no potencial de Fermi e da mobilidade dos elétrons, ocorrem variações nos parâmetros com a redução da temperatura e a variação do comprimento do canal (L), esse efeito foi observado para todos os dispositivos com diferentes comprimentos de canal (L), e para as temperaturas analisadas. Adicionalmente, estes transistores de AlGaN/GaN HEMT, respondem de forma satisfatória, quando submetidos a operações em baixas temperaturas.
The main objective of this work is to study the performance of AlGaN/GaN HEMT high electronic mobility transistors, when subjected to low operating temperatures. This investigation is developed from experimental data collected in the laboratory of an experimental device and research in books and academic publications of AlGaN/GaN HEMT devices. The measurements analyzed are measured at low temperatures, using devices with different dimensions of length (L) and width (W) of the channel. From the data collected, it is possible to obtain several parameters of the devices such as IDxVG, IDxVD, IGxVG characteristic curves, transconductance, threshold voltage (VT), DIBL (drain-induced barrier reduction), subthreshold slope (SS), the device gate leakage current, output conductance (gD), Early voltage (VEA) and intrinsic voltage gain (AV) verifying the performance and response of the device and a certain temperature range, which were measured in the laboratory, as well as the influence that changes in dimensions can have on the performance of AlGaN/GaN HEMT devices. These AlGaN/GaN HEMT transistors were fabricated on a 200mm high resistivity (SiHR) silicon wafer with crystallographic orientation (111). The analyzed results of the AlGaN/GaN HEMT device show that, due to the change in the Fermi potential and the mobility of electrons, variations in the parameters occur with the reduction of temperature and the variation of the channel length (L). This effect was observed for all devices with different channel lengths (L), and for the for analyzed temperatures. Additionally, these AlGaN/GaN HEMT transistors respond satisfactorily when subjected to operations at low temperatures.
The main objective of this work is to study the performance of AlGaN/GaN HEMT high electronic mobility transistors, when subjected to low operating temperatures. This investigation is developed from experimental data collected in the laboratory of an experimental device and research in books and academic publications of AlGaN/GaN HEMT devices. The measurements analyzed are measured at low temperatures, using devices with different dimensions of length (L) and width (W) of the channel. From the data collected, it is possible to obtain several parameters of the devices such as IDxVG, IDxVD, IGxVG characteristic curves, transconductance, threshold voltage (VT), DIBL (drain-induced barrier reduction), subthreshold slope (SS), the device gate leakage current, output conductance (gD), Early voltage (VEA) and intrinsic voltage gain (AV) verifying the performance and response of the device and a certain temperature range, which were measured in the laboratory, as well as the influence that changes in dimensions can have on the performance of AlGaN/GaN HEMT devices. These AlGaN/GaN HEMT transistors were fabricated on a 200mm high resistivity (SiHR) silicon wafer with crystallographic orientation (111). The analyzed results of the AlGaN/GaN HEMT device show that, due to the change in the Fermi potential and the mobility of electrons, variations in the parameters occur with the reduction of temperature and the variation of the channel length (L). This effect was observed for all devices with different channel lengths (L), and for the for analyzed temperatures. Additionally, these AlGaN/GaN HEMT transistors respond satisfactorily when subjected to operations at low temperatures.
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Palavras-chave
Transistor HEMT, GaN, High Electron Mobility Transistor, 2DEG, FET