Silicon carbide surface modification by nitrogen plasma expander

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dc.contributor.authorSantos, Carlos N. [UNESP]
dc.contributor.authorMarins, Eleasar M.
dc.contributor.authorMachida, Munemasa
dc.contributor.authorde Campos, Elson
dc.contributor.authorMota, Rogério Pinto [UNESP]
dc.contributor.authorMelo, Francisco C. L.
dc.contributor.authorOliveira Hein, Luis R. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:27:40Z
dc.date.available2014-05-20T13:27:40Z
dc.date.issued2012-01-01
dc.description.abstractSilicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.en
dc.description.affiliationUNESP, DFQ, Fac Engn, Guaratingueta, SP, Brazil
dc.description.affiliationUnespUNESP, DFQ, Fac Engn, Guaratingueta, SP, Brazil
dc.format.extent1428-1432
dc.identifierhttp://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428
dc.identifier.citationAdvanced Powder Technology Viii, Pts 1 and 2. Stafa-zurich: Trans Tech Publications Ltd, v. 727-728, p. 1428-1432, 2012.
dc.identifier.doi10.4028/www.scientific.net/MSF.727-728.1428
dc.identifier.issn0255-5476
dc.identifier.urihttp://hdl.handle.net/11449/9164
dc.identifier.wosWOS:000310714100255
dc.language.isoeng
dc.publisherTrans Tech Publications Ltd
dc.relation.ispartofAdvanced Powder Technology Viii, Pts 1 and 2
dc.relation.ispartofsjr0,180
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectSiCen
dc.subjectYAGen
dc.subjectmechanical propertiesen
dc.subjectplasma expanderen
dc.subjectnitrogenen
dc.subjectSEMen
dc.subjectAFMen
dc.subjectEDSen
dc.titleSilicon carbide surface modification by nitrogen plasma expanderen
dc.typeTrabalho apresentado em evento
dcterms.rightsHolderTrans Tech Publications Ltd
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Guaratinguetápt

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Artigos - Física e Química - FEG