Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
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Data
2022-01-01
Autores
Junior, Braz Baptista [UNESP]
De Andrade, Maria Gloria Cano [UNESP]
De Oliveira Bergamim, Luis Felipe [UNESP]
Nogueira, Carlos Roberto [UNESP]
Abud, Renan Baptista [UNESP]
Simoen, Eddy
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Resumo
In this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications.
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AlGaN/GaN, gate leakage, HEMT, High-temperature
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2022 IEEE Latin America Electron Devices Conference, LAEDC 2022.