Dip-coating deposition of BiVO4/NiO p–n heterojunction thin film and efficiency for methylene blue degradation

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dc.contributor.authorda Silva, M. R. [UNESP]
dc.contributor.authorScalvi, L. V.A. [UNESP]
dc.contributor.authorNeto, Vanildo Souza Leão
dc.contributor.authorDall’Antonia, L. H.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Estadual de Londrina (UEL)
dc.date.accessioned2018-12-11T16:39:16Z
dc.date.available2018-12-11T16:39:16Z
dc.date.issued2015-10-22
dc.description.abstractThis paper deals with a simple FTO/p–n heterojunction electrode assembly formed by BiVO4 and NiO thin films, where the precursor solution is obtained by solution combustion synthesis and precipitation in aqueous media techniques, respectively, whereas the thin films were deposited by the dip-coating deposition process. The FTO/p–n electrodes are characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV–Vis spectroscopy. The performance analysis based on the methylene blue degradation reaction have shown that the p–n electrodes, FTO/p-NiO/n-BiVO4 and FTO/n-BiVO4/p-NiO have higher electroactivity under visible light irradiation condition when compared to single BiVO4 thin film, deposited separately, with estimated kobs value of 340 × 10−4 min−1, 270 × 10−4 min−1 and 150 × 10−4 min−1, respectively.en
dc.description.affiliationEngineering College CTI UNESP – São Paulo State University
dc.description.affiliationDepartment of Physics – FC UNESP –São Paulo State University
dc.description.affiliationDepartment of Chemistry UEL – State University of Londrina
dc.description.affiliationUnespEngineering College CTI UNESP – São Paulo State University
dc.description.affiliationUnespDepartment of Physics – FC UNESP –São Paulo State University
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.format.extent7705-7714
dc.identifierhttp://dx.doi.org/10.1007/s10854-015-3412-6
dc.identifier.citationJournal of Materials Science: Materials in Electronics, v. 26, n. 10, p. 7705-7714, 2015.
dc.identifier.doi10.1007/s10854-015-3412-6
dc.identifier.file2-s2.0-84941942263.pdf
dc.identifier.issn1573-482X
dc.identifier.issn0957-4522
dc.identifier.scopus2-s2.0-84941942263
dc.identifier.urihttp://hdl.handle.net/11449/168023
dc.language.isoeng
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.ispartofsjr0,503
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.titleDip-coating deposition of BiVO4/NiO p–n heterojunction thin film and efficiency for methylene blue degradationen
dc.typeArtigo

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