Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

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dc.contributor.authorShibatta-Kagesawa, S. T.
dc.contributor.authorGuarany, C. A.
dc.contributor.authorAraujo, E. B.
dc.contributor.authorOki, N.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:11Z
dc.date.available2014-05-20T15:30:11Z
dc.date.issued2005-01-01
dc.description.abstractFatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.en
dc.description.affiliationUNESP, Dept Engn Elect, BR-15385000 Solteira, SP, Brazil
dc.description.affiliationUnespUNESP, Dept Engn Elect, BR-15385000 Solteira, SP, Brazil
dc.format.extent171-176
dc.identifierhttp://dx.doi.org/10.1557/PROC-830-D3.12
dc.identifier.citationMaterials and Processes For Nonvolatile Memories. Warrendale: Materials Research Society, v. 830, p. 171-176, 2005.
dc.identifier.doi10.1557/PROC-830-D3.12
dc.identifier.issn0272-9172
dc.identifier.lattes6725982228402054
dc.identifier.lattes1525717947689076
dc.identifier.urihttp://hdl.handle.net/11449/39622
dc.identifier.wosWOS:000228724300024
dc.language.isoeng
dc.publisherMaterials Research Society
dc.relation.ispartofMaterials and Processes For Nonvolatile Memories
dc.relation.ispartofsjr0,139
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.titleDielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors methoden
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://journals.cambridge.org/action/displaySpecialPage?pageId=4676#
dcterms.rightsHolderMaterials Research Society
unesp.author.lattes6725982228402054
unesp.author.lattes1525717947689076
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Ilha Solteirapt

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