Erbium-activated HfO2-based waveguides for photonics

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dc.contributor.authorGonçalves, Rogeria R.
dc.contributor.authorCarturan, Giovanni
dc.contributor.authorMontagna, Maurizio
dc.contributor.authorFerrari, Maurizio
dc.contributor.authorZampedri, Luca
dc.contributor.authorPelli, Stefano
dc.contributor.authorRighini, Giancarlo C.
dc.contributor.authorRibeiro, Sidney J.L. [UNESP]
dc.contributor.authorMessaddeq, Younes [UNESP]
dc.contributor.institutionCNR
dc.contributor.institutionUniv Trent
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:24:14Z
dc.date.available2014-05-20T15:24:14Z
dc.date.issued2004-03-01
dc.description.abstractSilica-based sol-gel waveguides activated by Er3+ ions are attractive materials for integrated optic devices. 70SiO(2)-30HfO(2) planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-get route. The films were deposited on v-SiO2 and silica-on-silicon substrates, using dip-coating technique. The waveguides show a homogeneous surface morphology, high densification degree and uniform refractive index across the thickness. Emission in the C-telecommunication band was observed at room temperature for ill the samples upon excitation at 980 nm. The shape is found to be almost independent on erbium content, with a FWHM between 44 and 48 nm. The I-4(13/2) level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 and 6.7 ms, depending on the erbium concentration. The waveguide deposited on silica-on-silicon substrate supports one single propagation mode at 1.5 mum with a confinement coefficient of 0.85, and a losses of about 0.8 dB/cm at 632.8 nm. (C) 2003 Elsevier B.V. All rights reserved.en
dc.description.affiliationCNR, IFN, I-38050 Trent, Italy
dc.description.affiliationUniv Trent, Dipartimento Ingn Mat, I-38050 Trent, Italy
dc.description.affiliationUniv Trent, Dipartimento Fis, I-38050 Trent, Italy
dc.description.affiliationUniv Trent, INFM, I-38050 Trent, Italy
dc.description.affiliationCNR, IFAC, I-50127 Florence, Italy
dc.description.affiliationUNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.format.extent131-139
dc.identifierhttp://dx.doi.org/10.1016/S0925-3467(03)00261-1
dc.identifier.citationOptical Materials. Amsterdam: Elsevier B.V., v. 25, n. 2, p. 131-139, 2004.
dc.identifier.doi10.1016/S0925-3467(03)00261-1
dc.identifier.issn0925-3467
dc.identifier.lattes2998503841917815
dc.identifier.urihttp://hdl.handle.net/11449/34874
dc.identifier.wosWOS:000189381700006
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofOptical Materials
dc.relation.ispartofjcr2.320
dc.relation.ispartofsjr0,592
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectoptical materialspt
dc.subjectplanar waveguidespt
dc.subjecterbiumpt
dc.subjectsilica-hafniapt
dc.subjectsol-gelpt
dc.subjectsilica-on-siliconpt
dc.titleErbium-activated HfO2-based waveguides for photonicsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes2998503841917815
unesp.author.orcid0000-0003-3286-9440[8]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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Artigos - Química Inorgânica - IQ