Improvement of the Deep UV Sensor Performance of a β-Ga2O3Photodiode by Coupling of Two Planar Diodes

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dc.contributor.authorVieira, Douglas H. [UNESP]
dc.contributor.authorBadiei, Nafiseh
dc.contributor.authorEvans, Jonathan E.
dc.contributor.authorAlves, Neri [UNESP]
dc.contributor.authorKettle, Jeff
dc.contributor.authorLi, Lijie
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionSwansea University
dc.contributor.institutionBangor University
dc.date.accessioned2021-06-25T11:06:19Z
dc.date.available2021-06-25T11:06:19Z
dc.date.issued2020-11-01
dc.description.abstract$\beta $ -Ga2O3 is one of the promising semiconductor materials that has been widely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it has been reported that the photocurrent was in the scale of microamps ( $\mu \text{A}$ ), which normally requires sophisticated signal processing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantial increase in photocurrent (186 times) when benchmarked against a conventional planar UV photodiode. The detectivity and responsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be $1.7\times 10^{7}$ with ultralow dark current, when measured in the reverse bias. The results confirm that the approach of coupling two Schottky diodes has enormous potential for improving the optical performance of deep UV sensors.en
dc.description.affiliationDepartamento de Fisica UNESP - Sao Paulo State University
dc.description.affiliationMultidisciplinary Nanotechnology Centre College of Engineering Swansea University
dc.description.affiliationSchool of Electronic Engineering Bangor University
dc.description.affiliationUnespDepartamento de Fisica UNESP - Sao Paulo State University
dc.format.extent4947-4952
dc.identifierhttp://dx.doi.org/10.1109/TED.2020.3022341
dc.identifier.citationIEEE Transactions on Electron Devices, v. 67, n. 11, p. 4947-4952, 2020.
dc.identifier.doi10.1109/TED.2020.3022341
dc.identifier.issn1557-9646
dc.identifier.issn0018-9383
dc.identifier.scopus2-s2.0-85094882843
dc.identifier.urihttp://hdl.handle.net/11449/208097
dc.language.isoeng
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.sourceScopus
dc.subjectDeep ultraviolet (UV)
dc.subjectgallium oxide
dc.subjectperformance improvement
dc.subjectphotodetector
dc.subjectSchottky diode
dc.titleImprovement of the Deep UV Sensor Performance of a β-Ga2O3Photodiode by Coupling of Two Planar Diodesen
dc.typeArtigo
unesp.author.orcid0000-0002-2813-5842[1]
unesp.author.orcid0000-0002-6511-4215[3]
unesp.author.orcid0000-0001-8001-301X[4]
unesp.author.orcid0000-0002-1245-5286[5]
unesp.author.orcid0000-0003-4630-7692[6]

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