Zero Temperature Coefficient behavior for advanced MOSFETs

Página do item simplificado
dc.contributor.authorMartino, Joao
dc.contributor.authorMesquita, Vinicius
dc.contributor.authorMacambira, Christian
dc.contributor.authorItocazu, Vitor
dc.contributor.authorAlmeida, Luciano
dc.contributor.authorAgopian, Paula [UNESP]
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionImec
dc.contributor.institutionKULeuven
dc.date.accessioned2018-12-11T16:49:12Z
dc.date.available2018-12-11T16:49:12Z
dc.date.issued2017-07-31
dc.description.abstractIn this work the Zero Temperature Coefficient (ZTC) is investigated experimentally using state-of-the-art industrial technologies like Ultra-Thin Body and Buried Oxide (UTBB) and triple-gate FinFETs (irradiated and/or strained devices), both fabricated on Silicon On Insulator (SOI) wafers. A simple analytical model to analyze the behavior of the gate-source voltage at the Zero Temperature Coefficient point (VZTC) is validated for these advanced devices. Although simple, the model predictions have shown good agreement with the experimental results and can be useful for low-power low-voltage analog circuit designers, where biasing at/near the ZTC point should result in low thermal drift of the circuit operation.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationUNESP Univ Estadual Paulista
dc.description.affiliationImec
dc.description.affiliationEE Dept KULeuven
dc.description.affiliationUnespUNESP Univ Estadual Paulista
dc.format.extent785-788
dc.identifierhttp://dx.doi.org/10.1109/ICSICT.2016.7999041
dc.identifier.citation2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 785-788.
dc.identifier.doi10.1109/ICSICT.2016.7999041
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85028643147
dc.identifier.urihttp://hdl.handle.net/11449/170085
dc.language.isoeng
dc.relation.ispartof2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.titleZero Temperature Coefficient behavior for advanced MOSFETsen
dc.typeTrabalho apresentado em evento
unesp.author.lattes0496909595465696[6]
unesp.author.orcid0000-0002-0886-7798[6]

Arquivos

Coleções

Artigos