Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

Página do item simplificado
dc.contributor.authorMachado, Diego Henrique de Oliveira [UNESP]
dc.contributor.authorFloriano, Emerson Aparecido [UNESP]
dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.contributor.authorSaeki, Margarida Juri [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2015-11-03T15:30:01Z
dc.date.available2015-11-03T15:30:01Z
dc.date.issued2014-01-01
dc.description.abstractTiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.en
dc.description.affiliationUnespUniversidade Estadual Paulista, Departamento de Física, Faculdade de Ciências de Bauru
dc.description.affiliationUnespUniversidade Estadual Paulista, Departamento de Química e Bioquímica, Instituto de Biociências de Botucatu
dc.format.extent201-206
dc.identifierhttp://www.scientific.net/AMR.975.201
dc.identifier.citationElectroceramics Vi. Stafa-zurich: Trans Tech Publications Ltd, v. 975, p. 201-206, 2014.
dc.identifier.doi10.4028/www.scientific.net/AMR.975.201
dc.identifier.issn1022-6680
dc.identifier.lattes7730719476451232
dc.identifier.lattes1802982806436894
dc.identifier.orcid0000-0001-5762-6424
dc.identifier.urihttp://hdl.handle.net/11449/130184
dc.identifier.wosWOS:000348023200033
dc.language.isoeng
dc.publisherTrans Tech Publications Ltd
dc.relation.ispartofElectroceramics Vi
dc.relation.ispartofsjr0,121
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectTin dioxideen
dc.subjectTitanium dioxideen
dc.subjectHeterostructureen
dc.subjectGas sensorsen
dc.subjectElectrical propertiesen
dc.titleInvestigation of photoinduced electrical properties in the heterojunction TiO2/SnO2en
dc.typeTrabalho apresentado em evento
dcterms.rightsHolderTrans Tech Publications Ltd
unesp.author.lattes1802982806436894
unesp.author.lattes7730719476451232[3]
unesp.author.orcid0000-0001-5762-6424[3]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Biociências, Botucatupt
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

Arquivos

Coleções

Bauru - FC - Faculdade de Ciências
Artigos - Química e Bioquímica - IBB