Electron trapping of laser-induced carriers in Er-doped SnO2 thin films

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dc.contributor.authorMorais, E. A.
dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:28:50Z
dc.date.available2014-05-20T15:28:50Z
dc.date.issued2007-01-01
dc.description.abstractIn order to investigate optically excited electronic transport in Er-doped SnO2, thin films are excited with the fourth harmonic of an Nd:YAG laser (266nm) at low temperature, yielding conductivity decay when the illumination is removed. Inspection of these electrical characteristics aims knowledge for electroluminescent devices operation. Based on a proposed model where trapping defects present thermally activated cross section, the capture barrier is evaluated as 140, 108, 100 and 148 meV for doped SnO2, thin films with 0.0, 0.05, 0. 10 and 4.0 at% of Er, respectively. The undoped film has vacancy levels as dominating, whereas for doped films. there are two distinct trapping centers: Er3+ substitutional at Sn lattice sites and Er3+ located at grain boundary. (C) 2007 Elsevier Ltd. All rights reserved.en
dc.description.affiliationUNESP, D Fis FC, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUniv Estadual Paulista, Progr Pos Grad Ciência & Tecnol Mat, São Paulo, Brazil
dc.description.affiliationUnespUNESP, D Fis FC, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Progr Pos Grad Ciência & Tecnol Mat, São Paulo, Brazil
dc.format.extent3803-3806
dc.identifierhttp://dx.doi.org/10.1016/j.jeurceramsoc.2007.02.037
dc.identifier.citationJournal of the European Ceramic Society. Oxford: Elsevier B.V., v. 27, n. 13-15, p. 3803-3806, 2007.
dc.identifier.doi10.1016/j.jeurceramsoc.2007.02.037
dc.identifier.issn0955-2219
dc.identifier.lattes7730719476451232
dc.identifier.orcid0000-0001-5762-6424
dc.identifier.urihttp://hdl.handle.net/11449/38574
dc.identifier.wosWOS:000248822800048
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of the European Ceramic Society
dc.relation.ispartofjcr3.794
dc.relation.ispartofsjr1,068
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjecttin dioxide filmspt
dc.subjectsol-gelpt
dc.subjecterbium dopingpt
dc.titleElectron trapping of laser-induced carriers in Er-doped SnO2 thin filmsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes7730719476451232
unesp.author.orcid0000-0001-5762-6424[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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