Effect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor method

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dc.contributor.authorSimões, Alexandre Zirpoli [UNESP]
dc.contributor.authorRamirez, M. A. [UNESP]
dc.contributor.authorRiccardi, C. S. [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:28:18Z
dc.date.available2014-05-20T13:28:18Z
dc.date.issued2008-12-01
dc.description.abstractStrontium bismuth titanate (SrBi4Ti4O15) thin films were deposited on (111) Pt/Ti/SiO2/Si Substrates by spin coating from the polymeric precursor method. Annealing in static air and dynamic oxygen atmosphere was performed at 700 degrees C for 2 h. The films were characterized by X-ray diffraction, atomic force microscopy and electric properties. The dielectric properties of SrBi4Ti4O15 films were found to be remarkably sensitive to the annealing atmosphere. The C-V characteristics of the metal-ferroelectric metal structure showed a typical butterfly loop that confirms the ferroelectric properties of the film related to the domains switching. SrBi4Ti4O15 thin films annealed in oxygen atmosphere showed lower ferroelectric behavior indicating a weak ferroelectricity along c-axis direction. Published by Elsevier Masson SAS.en
dc.description.affiliationSão Paulo State Univ UNESP, Inst Chem, BR-14801970 Araraguara, SP, Brazil
dc.description.affiliationSão Paulo State Univ UNESP, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespSão Paulo State Univ UNESP, Inst Chem, BR-14801970 Araraguara, SP, Brazil
dc.description.affiliationUnespSão Paulo State Univ UNESP, BR-17033360 Bauru, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.format.extent1951-1957
dc.identifierhttp://dx.doi.org/10.1016/j.solidstatesciences.2008.03.027
dc.identifier.citationSolid State Sciences. Amsterdam: Elsevier B.V., v. 10, n. 12, p. 1951-1957, 2008.
dc.identifier.doi10.1016/j.solidstatesciences.2008.03.027
dc.identifier.issn1293-2558
dc.identifier.lattes3573363486614904
dc.identifier.urihttp://hdl.handle.net/11449/9414
dc.identifier.wosWOS:000262236800044
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofSolid State Sciences
dc.relation.ispartofjcr1.861
dc.relation.ispartofsjr0,574
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectThin filmsen
dc.subjectAtomic force microscopyen
dc.subjectDielectric propertiesen
dc.titleEffect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor methoden
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes3573363486614904
unesp.author.lattes0173401604473200[3]
unesp.author.orcid0000-0003-2192-5312[3]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Guaratinguetápt

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