Effect of pH of colloidal suspension on crystallization and activation energy of deep levels in SnO2 thin films obtained via sol-gel

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dc.contributor.authorRavaro, Leandro P. [UNESP]
dc.contributor.authordos Santos, Dayse I. [UNESP]
dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:26:20Z
dc.date.available2014-05-20T13:26:20Z
dc.date.issued2009-09-01
dc.description.abstractColloidal suspensions of tin dioxide (SnO2) are prepared by the sol-gel method from suspensions with distinct pHs. The particles in solution are embedded by an electrical layer. Decreasing the pH contributes to the destruction of this layer, leading to a high degree of aggregation among particles (clusters) due to the generation of cross-linked bonds (Sn-O-Sn) between them. The aggregation affects the electrical properties of films deposited by dip-coating from these solutions, due to the higher packing produced by acid pH. The X-ray diffractograms of films indicate higher crystallinity for lower pH. The Arrhenius plot leads to activation energies of the deepest level, which was between 67 and 140 meV, for the films prepared from suspensions with pH 6-11. Lower pH films also presented higher electrical conductivity. Obtained activation energies may be related to different types of defects, which could be associated with oxygen vacancies with distinct neighborhoods, influenced by the pH and potential barriers between grains, due to distinct packing caused by cross-linked bonds. TGA/DTA results indicate an easier crystallization process for lower pH, which ends at lower temperature, in good agreement with X-ray diffraction data. (C) 2009 Elsevier Ltd. All rights reserved.en
dc.description.affiliationUNESP State Univ São Paulo, Adv Mat Grp MAV, Dept Fis, Bauru, SP, Brazil
dc.description.affiliationUnespUNESP State Univ São Paulo, Adv Mat Grp MAV, Dept Fis, Bauru, SP, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent1312-1316
dc.identifierhttp://dx.doi.org/10.1016/j.jpcs.2009.07.018
dc.identifier.citationJournal of Physics and Chemistry of Solids. Oxford: Pergamon-Elsevier B.V. Ltd, v. 70, n. 9, p. 1312-1316, 2009.
dc.identifier.doi10.1016/j.jpcs.2009.07.018
dc.identifier.issn0022-3697
dc.identifier.lattes7730719476451232
dc.identifier.orcid0000-0001-5762-6424
dc.identifier.urihttp://hdl.handle.net/11449/8468
dc.identifier.wosWOS:000270123000012
dc.language.isoeng
dc.publisherPergamon-Elsevier B.V. Ltd
dc.relation.ispartofJournal of Physics and Chemistry of Solids
dc.relation.ispartofjcr2.207
dc.relation.ispartofsjr0,594
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectOxidesen
dc.subjectSemiconductorsen
dc.subjectSol-gel growthen
dc.subjectThermogravimetric analysis (TGA)en
dc.subjectElectrical propertiesen
dc.titleEffect of pH of colloidal suspension on crystallization and activation energy of deep levels in SnO2 thin films obtained via sol-gelen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderPergamon-Elsevier B.V. Ltd
unesp.author.lattes7730719476451232
unesp.author.orcid0000-0001-5762-6424[3]
unesp.author.orcid0000-0002-4932-5776[1]
unesp.author.orcid0000-0002-9280-4334[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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