Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers

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dc.contributor.authorBoselli, M. A.
dc.contributor.authorLima, ICD
dc.contributor.authorGhazali, A.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Paris 06
dc.date.accessioned2014-05-20T15:29:50Z
dc.date.available2014-05-20T15:29:50Z
dc.date.issued2004-05-01
dc.description.abstractThe magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, establishing a self-consistency between the magnetic order and the electronic structure. The Curie-Weiss temperatures calculated for these low-dimensional systems are in the range of 50-80 K, and the dependence of the transition temperature with the GaAs separation layer is established. (C) 2003 Published by Elsevier B.V.en
dc.description.affiliationUniv Estadual Paulista, Inst Fis, Rua Sao Francisco Xavier 524, BR-20500013 Rio de Janeiro, Brazil
dc.description.affiliationUniv Paris 06, CNRS, Grp Phys Solides, F-75251 Paris 05, France
dc.description.affiliationUnespUniv Estadual Paulista, Inst Fis, Rua Sao Francisco Xavier 524, BR-20500013 Rio de Janeiro, Brazil
dc.format.extent351-352
dc.identifierhttp://dx.doi.org/10.1016/j.jmmm.2003.11.383
dc.identifier.citationJournal of Magnetism and Magnetic Materials. Amsterdam: Elsevier B.V., v. 272, p. 351-352, 2004.
dc.identifier.doi10.1016/j.jmmm.2003.11.383
dc.identifier.issn0304-8853
dc.identifier.urihttp://hdl.handle.net/11449/39325
dc.identifier.wosWOS:000222236500155
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Magnetism and Magnetic Materials
dc.relation.ispartofjcr3.046
dc.relation.ispartofsjr0,786
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectdiluted magnetic semiconductorpt
dc.subject(Ga,Mn)Aspt
dc.subjectspintronicspt
dc.titleEffect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayersen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Física Teórica (IFT), São Paulopt

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