Low temperature performance of proton irradiated strained SOI FinFET

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dc.contributor.authorCaparroz, L. F. V.
dc.contributor.authorBordallo, C. C. M.
dc.contributor.authorMartino, J. A.
dc.contributor.authorSimoen, E.
dc.contributor.authorClaeys, C.
dc.contributor.authorAgopian, P. G. D. [UNESP]
dc.contributor.authorSarafis, P.
dc.contributor.authorNassiopoulou, A. G.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionIMEC
dc.contributor.institutionKatholieke Univ Leuven
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-11-26T15:47:28Z
dc.date.available2018-11-26T15:47:28Z
dc.date.issued2017-01-01
dc.description.abstractThis paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, focusing on the threshold voltage (V-TH), subthreshold swing (SS), the Early voltage V-EA and the intrinsic gain voltage (A(V)). The effects of strain techniques are also studied. The p-channel devices showed a greater immunity to radiation when looking at their digital parameters while nFinFETs had a better response to proton radiation from an analog parameters point of view.en
dc.description.affiliationUniv Sao Paulo, LSI PSI USP, Sao Paulo, Brazil
dc.description.affiliationIMEC, Leuven, Belgium
dc.description.affiliationKatholieke Univ Leuven, EE Dept, Leuven, Belgium
dc.description.affiliationSao Paulo State Univ UNESP, Campus Sao Joao da Boa Vista, Sao Paulo, Brazil
dc.description.affiliationUnespSao Paulo State Univ UNESP, Campus Sao Joao da Boa Vista, Sao Paulo, Brazil
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.format.extent61-63
dc.identifier.citation2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 61-63, 2017.
dc.identifier.issn2330-5738
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.urihttp://hdl.handle.net/11449/160097
dc.identifier.wosWOS:000425210900017
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017)
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectFinFET
dc.subjectlow temperature
dc.subjectproton radiation
dc.subjectstrained devices
dc.titleLow temperature performance of proton irradiated strained SOI FinFETen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
unesp.author.lattes0496909595465696[6]
unesp.author.orcid0000-0002-0886-7798[6]

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