Storage moduli, loss moduli and damping factor of GaAs and Ga1-xMnxAs thin films using DMA 2980

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dc.contributor.authorKemei, S. K.
dc.contributor.authorKirui, M. S. K.
dc.contributor.authorNdiritu, F. G.
dc.contributor.authorOdhiambo, P. M.
dc.contributor.authorNgumbu, R. G.
dc.contributor.authorLeite, D. M. G. [UNESP]
dc.contributor.authorPereira, A. L. J. [UNESP]
dc.contributor.institutionEgerton Univ
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-12-03T13:09:00Z
dc.date.available2014-12-03T13:09:00Z
dc.date.issued2014-04-01
dc.description.abstractThe spin injector part of spintronic FET and diodes suffers from fatigue due to rising heat on the depletion layer. In this study the stiffness of Ga1-xMnxAs spin injector in terms of storage modulus with respect to a varying temperature, 45 degrees C <= T <= 70 degrees C was determined. It was observed that the storage modulus for MDLs (Manganese Doping Levels) of 0%, 1% and 10% decreased with increase in temperature while that with MDLs of 20% and 50% increase with increase in temperature. MDLs of 20% and 50% appear not to allow for damping but MDLs <= 20% allow damping at temperature range of 45 degrees C <= T <= 70 degrees C. The magnitude of storage moduli of GaAs is smaller than that for ferromagnetic Ga1-xMnxAs systems. The loss moduli for GaAs were found to reduce with increase in temperature. Its magnitude of reducing gradient is smaller than Ga1-xMnxAs systems. The two temperature extremes show a general reduction in loss moduli for different MDLs at the study temperature range. From damping factor analysis, damping factors for ferromagnetic Ga1-xMnxAs was found to increase with decrease in MDLs contrary to GaAs which recorded the largest damping factor at 45 degrees C <= T <= 70 degrees C Hence, MDL of 20% shows little damping followed by 50% while MDL of 0% has the most damping in an increasing trend with temperature. (C) 2013 Elsevier Ltd. All rights reserved.en
dc.description.affiliationEgerton Univ, Dept Phys, Egerton, Kenya
dc.description.affiliationSao Paulo State Univ, Adv Mat Grp, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespSao Paulo State Univ, Adv Mat Grp, BR-17033360 Bauru, SP, Brazil
dc.format.extent23-26
dc.identifierhttp://dx.doi.org/10.1016/j.mssp.2013.12.011
dc.identifier.citationMaterials Science In Semiconductor Processing. Oxford: Elsevier Sci Ltd, v. 20, p. 23-26, 2014.
dc.identifier.doi10.1016/j.mssp.2013.12.011
dc.identifier.issn1369-8001
dc.identifier.urihttp://hdl.handle.net/11449/111817
dc.identifier.wosWOS:000332445100005
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.ispartofjcr2.593
dc.relation.ispartofsjr0,634
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectStorage modulusen
dc.subjectLoss modulusen
dc.subjectDampingen
dc.subjectDynamic mechanical analysisen
dc.subjectManganese doping levelsen
dc.titleStorage moduli, loss moduli and damping factor of GaAs and Ga1-xMnxAs thin films using DMA 2980en
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.orcid0000-0002-1792-6171[6]
unesp.author.orcid0000-0003-4757-8080[7]

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