Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

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dc.contributor.authorPontes, D. S.L.
dc.contributor.authorPontes, F. M. [UNESP]
dc.contributor.authorPereira-Da-Silva, Marcelo A.
dc.contributor.authorBerengue, O. M.
dc.contributor.authorChiquito, A. J.
dc.contributor.authorLongo, E. [UNESP]
dc.contributor.institutionLIEC, Department of Chemistry, Universidade Federal de Saõ Carlos
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUNICEP
dc.contributor.institutionNanO LaB, Department of Physics, Universidade Federal de Saõ Carlos
dc.date.accessioned2018-12-11T17:24:40Z
dc.date.available2018-12-11T17:24:40Z
dc.date.issued2014-01-01
dc.description.abstractLaNiO3 thin films were deposited on SrLaAlO4 (100) and SrLaAlO4 (001) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700°C in tube oven. Structural, morphological, and electrical properties of the LaNiO3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (100) and (001) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces.en
dc.description.affiliationLIEC, Department of Chemistry, Universidade Federal de Saõ Carlos, Via Washington Luiz
dc.description.affiliationDepartment of Chemistry, Universidade Estadual Paulista-Unesp, P.O. Box 473
dc.description.affiliationInstitute of Physics of Saõ Carlos, USP
dc.description.affiliationUNICEP
dc.description.affiliationNanO LaB, Department of Physics, Universidade Federal de Saõ Carlos, Via Washington Luiz
dc.description.affiliationInstitute of Chemistry, Universidade Estadual Paulista-Unesp
dc.description.affiliationUnespDepartment of Chemistry, Universidade Estadual Paulista-Unesp, P.O. Box 473
dc.description.affiliationUnespInstitute of Chemistry, Universidade Estadual Paulista-Unesp
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.identifierhttp://dx.doi.org/10.1557/opl.2014.116
dc.identifier.citationJournal of British Studies, v. 1633, n. 3, 2014.
dc.identifier.doi10.1557/opl.2014.116
dc.identifier.issn0021-9371
dc.identifier.scopus2-s2.0-84910109190
dc.identifier.urihttp://hdl.handle.net/11449/177259
dc.language.isoeng
dc.relation.ispartofJournal of British Studies
dc.relation.ispartofsjr0,246
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectelectrical properties
dc.subjectepitaxy
dc.subjectthin film
dc.titleStructural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition methoden
dc.typeArtigo

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