The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorRamirez, M. A.
dc.contributor.authorStojanovic, B. D.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:25:57Z
dc.date.available2014-05-20T15:25:57Z
dc.date.issued2006-10-15
dc.description.abstractLanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.en
dc.description.affiliationPaulista State Univ, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationPaulista State Univ, UNESP, BR-1703336 Bauru, SP, Brazil
dc.description.affiliationUnespPaulista State Univ, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespPaulista State Univ, UNESP, BR-1703336 Bauru, SP, Brazil
dc.format.extent8471-8475
dc.identifierhttp://dx.doi.org/10.1016/j.apsusc.2005.11.055
dc.identifier.citationApplied Surface Science. Amsterdam: Elsevier B.V., v. 252, n. 24, p. 8471-8475, 2006.
dc.identifier.doi10.1016/j.apsusc.2005.11.055
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/11449/36265
dc.identifier.wosWOS:000241888000016
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofApplied Surface Science
dc.relation.ispartofjcr4.439
dc.relation.ispartofsjr1,093
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectthin filmspt
dc.subjectatomic force microscopypt
dc.subjectdielectric propertiespt
dc.subjectfatiguept
dc.titleThe effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor methoden
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes3573363486614904[1]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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