Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

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dc.contributor.authorLopes, E. M. [UNESP]
dc.contributor.authorCésar, D. F.
dc.contributor.authorFranchello, F.
dc.contributor.authorDuarte, J. L.
dc.contributor.authorDias, I. F L
dc.contributor.authorLaureto, E.
dc.contributor.authorElias, D. C.
dc.contributor.authorPereira, M. V M
dc.contributor.authorGuimarães, P. S S
dc.contributor.authorQuivy, A. A.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual de Londrina (UEL)
dc.contributor.institutionUniversidade Federal de Minas Gerais (UFMG)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.date.accessioned2014-05-27T11:30:04Z
dc.date.available2014-05-27T11:30:04Z
dc.date.issued2013-07-31
dc.description.abstractThis paper discusses the theoretical and experimental results obtained for the excitonic binding energy (Eb) in a set of single and coupled double quantum wells (SQWs and CDQWs) of GaAs/AlGaAs with different Al concentrations (Al%) and inter-well barrier thicknesses. To obtain the theoretical Eb the method proposed by Mathieu, Lefebvre and Christol (MLC) was used, which is based on the idea of fractional-dimension space, together with the approach proposed by Zhao et al., which extends the MLC method for application in CDQWs. Through magnetophotoluminescence (MPL) measurements performed at 4 K with magnetic fields ranging from 0 T to 12 T, the diamagnetic shift curves were plotted and adjusted using two expressions: one appropriate to fit the curve in the range of low intensity fields and another for the range of high intensity fields, providing the experimental Eb values. The effects of increasing the Al% and the inter-well barrier thickness on E b are discussed. The Eb reduction when going from the SQW to the CDQW with 5 Å inter-well barrier is clearly observed experimentally for 35% Al concentration and this trend can be noticed even for concentrations as low as 25% and 15%, although the Eb variations in these latter cases are within the error bars. As the Zhao's approach is unable to describe this effect, the wave functions and the probability densities for electrons and holes were calculated, allowing us to explain this effect as being due to a decrease in the spatial superposition of the wave functions caused by the thin inter-well barrier. © 2013 Elsevier B.V.en
dc.description.affiliationDepartamento de Física, Química e Biologia Universidade Estadual Paulista, C. P. 266, Presidente Prudente, São Paulo 17700-000
dc.description.affiliationDepartamento de Física Universidade Federal de São Carlos, C. P. 676, São Carlos, São Paulo
dc.description.affiliationDepartamento de Física Universidade Estadual de Londrina, C. P. 6001, Londrina, Paraná
dc.description.affiliationDepartamento de Física Instituto de Ciências Exatas Universidade Federal de Minas Gerais, C. P. 702, Belo Horizonte, Minas Gerais
dc.description.affiliationLaboratório de Novos Materiais Semicondutores Instituto de Física Universidade de São Paulo, C. P. 66318, São Paulo
dc.description.affiliation, Rua Oito, no.275, Osvaldo Cruz, SP, CEP 17700-000
dc.description.affiliationUnespDepartamento de Física, Química e Biologia Universidade Estadual Paulista, C. P. 266, Presidente Prudente, São Paulo 17700-000
dc.format.extent98-104
dc.identifierhttp://dx.doi.org/10.1016/j.jlumin.2013.06.037
dc.identifier.citationJournal of Luminescence, v. 144, p. 98-104.
dc.identifier.doi10.1016/j.jlumin.2013.06.037
dc.identifier.issn0022-2313
dc.identifier.scopus2-s2.0-84880668366
dc.identifier.urihttp://hdl.handle.net/11449/76084
dc.identifier.wosWOS:000325600100019
dc.language.isoeng
dc.relation.ispartofJournal of Luminescence
dc.relation.ispartofjcr2.732
dc.relation.ispartofsjr0,694
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectCoupled double quantum wells
dc.subjectExcitonic binding energy
dc.subjectGaAs/AlGaAs
dc.subjectMagnetophotoluminescence
dc.subjectDouble quantum well
dc.subjectElectrons and holes
dc.subjectExcitonic binding
dc.subjectHigh-intensity fields
dc.subjectProbability densities
dc.subjectTheoretical and experimental
dc.subjectAluminum
dc.subjectBinding energy
dc.subjectWave functions
dc.subjectSemiconductor quantum wells
dc.titleTheoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wellsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
unesp.author.orcid0000-0002-6654-6239[10]
unesp.author.orcid0000-0002-0113-2641[9]
unesp.author.orcid0000-0003-4986-8970[3]
unesp.author.orcid0000-0001-8567-0705[4]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências e Tecnologia, Presidente Prudentept

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