Electrolyte-Gated WO3 Transistors: Electrochemistry, Structure, and Device Performance

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dc.contributor.authorMeng, Xiang
dc.contributor.authorQuenneville, Francis
dc.contributor.authorVenne, Frédéric
dc.contributor.authorDi Mauro, Eduardo
dc.contributor.authorIşlk, Dilek
dc.contributor.authorBarbosa, Martin [UNESP]
dc.contributor.authorDrolet, Yves
dc.contributor.authorNatile, Marta M.
dc.contributor.authorRochefort, Dominic
dc.contributor.authorSoavi, Francesca
dc.contributor.authorSantato, Clara
dc.contributor.institutionPolytechnique Montréal
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionUniversità di Padova
dc.contributor.institutionUniversité de Montréal
dc.contributor.institutionUniversità di Bologna
dc.date.accessioned2022-04-28T19:01:35Z
dc.date.available2022-04-28T19:01:35Z
dc.date.issued2015-09-17
dc.description.abstractElectrolyte-gated (EG) transistors, based on electrolyte gating media, are powerful device structures to modulate the charge carrier density of materials by orders of magnitude, at relatively low operating voltages (sub-2 V). Tungsten trioxide (WO3) is a metal oxide semiconductor well investigated for applications in electrochromism, sensing, photocatalysis, and photoelectrochemistry. In this work, we report on EG transistors making use of mesoporous nanostructured WO3 thin films easily permeated by the electrolyte as the transistor channel and bis(trifluoromethylsulfonyl)imide ([TFSI])-based ionic liquids as the gating media. The WO3 EG transistors operate at ca. 1 V. Using a combination of cyclic voltammetry, X-ray diffraction, and transistor performance characterizations, complemented by spectroscopic (Raman and infrared) investigations, we correlate the metal oxidation state and the charge transport properties of the metal oxide, shedding light on the doping process in electrically biased WO3 nanostructured thin films exposed to electrolytes.en
dc.description.affiliationDépartement de Génie Physique Polytechnique Montréal, C.P. 6079, Succ. Centre Ville
dc.description.affiliationDepartamento de Físico-Química Universidade Estadual Paulista, Rua Professor Degni, 55
dc.description.affiliationCNR-IENI Dipartimento di Scienze Chimiche Università di Padova, Via F. Marzolo 1
dc.description.affiliationDépartement de Chimie Université de Montréal, C.P. 6128, Succ. Centre Ville
dc.description.affiliationDipartimento di Chimica giacomo Ciamician Università di Bologna, Via Selmi, 2
dc.description.affiliationUnespDepartamento de Físico-Química Universidade Estadual Paulista, Rua Professor Degni, 55
dc.format.extent21732-21738
dc.identifierhttp://dx.doi.org/10.1021/acs.jpcc.5b06777
dc.identifier.citationJournal of Physical Chemistry C, v. 119, n. 37, p. 21732-21738, 2015.
dc.identifier.doi10.1021/acs.jpcc.5b06777
dc.identifier.issn1932-7455
dc.identifier.issn1932-7447
dc.identifier.scopus2-s2.0-84941910679
dc.identifier.urihttp://hdl.handle.net/11449/220455
dc.language.isoeng
dc.relation.ispartofJournal of Physical Chemistry C
dc.sourceScopus
dc.titleElectrolyte-Gated WO3 Transistors: Electrochemistry, Structure, and Device Performanceen
dc.typeArtigo

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