Electrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical method

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dc.contributor.authorDestro, F. B. [UNESP]
dc.contributor.authorMoura, F.
dc.contributor.authorFoschini, C. R. [UNESP]
dc.contributor.authorRanieri, M. G. [UNESP]
dc.contributor.authorLongo, E. [UNESP]
dc.contributor.authorSimoes, A. Z. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de Itajubá (UNIFEI)
dc.date.accessioned2014-12-03T13:11:27Z
dc.date.available2014-12-03T13:11:27Z
dc.date.issued2014-07-01
dc.description.abstractThis paper focuses on the electrical properties of Bi0.95Nd0.05FeO3 thin films (BNFO05) deposited on Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method. A BNFO05 single phase was simultaneously grown at a temperature of 500 degrees C for 2 h. Room temperature magnetic coercive field indicates that the film is magnetically soft. The remanent polarization (P-r) and the coercive field (E-c) measured were 51 mu C/cm(2) and 65.0 kV/cm, respectively, and were superior to the values found in the literature. XPS results show that the oxidation state of Fe is purely 3+, which is beneficial for producing a BNFO05 film with low leakage current. The polarization of the Au/BNFO05 on Pt/TiO2/SiO2/Si (100) capacitors with a thickness of 230 nm exhibited no degradation after 1 x 10(8) switching cycles at a frequency of 1 MHz. Experimental results demonstrated that the soft chemical method is a promising technique for growing films with excellent electrical properties, and can be used in various integrated device applications. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.en
dc.description.affiliationUniv Estadual Paulista UNESP, Fac Engn Guaratingueta, BR-12516410 Guaratingueta, SP, Brazil
dc.description.affiliationUniv Fed Itajuba UNIFEI, BR-3590037 Itabira, MG, Brazil
dc.description.affiliationUNESP, Inst Quim, Dept Quim Fis, Lab Interdisciplinar Ceram LIEC, BR-14800900 Araraquara, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista UNESP, Fac Engn Guaratingueta, BR-12516410 Guaratingueta, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, Dept Quim Fis, Lab Interdisciplinar Ceram LIEC, BR-14800900 Araraquara, SP, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent8715-8722
dc.identifierhttp://dx.doi.org/10.1016/j.ceramint.2014.01.090
dc.identifier.citationCeramics International. Oxford: Elsevier Sci Ltd, v. 40, n. 6, p. 8715-8722, 2014.
dc.identifier.doi10.1016/j.ceramint.2014.01.090
dc.identifier.issn0272-8842
dc.identifier.lattes1922357184842767
dc.identifier.orcid0000-0003-1300-4978
dc.identifier.urihttp://hdl.handle.net/11449/113161
dc.identifier.wosWOS:000335201800133
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofCeramics International
dc.relation.ispartofjcr3.057
dc.relation.ispartofsjr0,784
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectChemical synthesisen
dc.subjectElectron diffractionen
dc.subjectFerroelectricityen
dc.subjectThin filmsen
dc.titleElectrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical methoden
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes3573363486614904[6]
unesp.author.lattes1922357184842767[3]
unesp.author.orcid0000-0003-1300-4978[3]
unesp.author.orcid0000-0003-2535-2187[6]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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