Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation

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dc.contributor.authorUeda, M.
dc.contributor.authorLepienski, C. M.
dc.contributor.authorRangel, E. C.
dc.contributor.authorCruz, N. C.
dc.contributor.authorDias, F. G.
dc.contributor.institutionInstituto Nacional de Pesquisas Espaciais (INPE)
dc.contributor.institutionUniversidade Federal do Paraná (UFPR)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:27:36Z
dc.date.available2014-05-20T13:27:36Z
dc.date.issued2002-07-01
dc.description.abstractSurfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.en
dc.description.affiliationINPE, LAP, BR-12201970 Sao Jose Dos Campos, SP, Brazil
dc.description.affiliationUFPR, Dept Fis, Curitiba, Parana, Brazil
dc.description.affiliationUNESP, Dept Quim & Fis, Guaratingueta, SP, Brazil
dc.description.affiliationUnespUNESP, Dept Quim & Fis, Guaratingueta, SP, Brazil
dc.format.extent190-194
dc.identifierhttp://dx.doi.org/10.1016/S0257-8972(02)00082-8
dc.identifier.citationSurface & Coatings Technology. Lausanne: Elsevier B.V. Sa, v. 156, n. 1-3, p. 190-194, 2002.
dc.identifier.doi10.1016/S0257-8972(02)00082-8
dc.identifier.issn0257-8972
dc.identifier.urihttp://hdl.handle.net/11449/9126
dc.identifier.wosWOS:000176480700035
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofSurface & Coatings Technology
dc.relation.ispartofjcr2.906
dc.relation.ispartofsjr0,928
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectplasma immersion ion implantationpt
dc.subjectsurface analysispt
dc.subjectnanohardnesspt
dc.subjectcontact anglept
dc.subjectsilicon carbidept
dc.subjectsilicon nitridept
dc.titleNanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantationen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Guaratinguetápt

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Artigos - Física e Química - FEG