Numerical analysis of pulsing regimes near static borders of optically injected semiconductor lasers

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dc.contributor.authorRodriguez, Sergio
dc.contributor.authorCampuzano, Gabriel
dc.contributor.authorAldaya, Ivan [UNESP]
dc.contributor.authorCastañón, Gerardo
dc.contributor.institutionTecnologico de Monterrey
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.date.accessioned2022-04-28T19:52:42Z
dc.date.available2022-04-28T19:52:42Z
dc.date.issued2022-04-01
dc.description.abstractIt is well known that semiconductor lasers under optical injection present rich, dynamic behavior. In this paper, we focus on pulsing regimes, which can be either exploited in a broad variety of applications or lead to undesired instabilities. In particular, we develop a multi-metric method to automatically identify pulsing regimes in the parameter space.We apply this method to extensive numerical simulations to show that these regimes occur in the vicinity of the static synchronization boundary. Furthermore, analyzing these pulsing regimes, we identify pulsations with repetition rates ranging from several megahertz up to more than 1 GHz. Finally, we analyze the effect of the linewidth enhancement factor and the slave-laser bias current, revealing that a linewidth enhancement factor of 3 and a higher bias current lead to broader regions of pulsation regimes.en
dc.description.affiliationSchool of Engineering and Sciences Tecnologico de Monterrey, E. Garza Sada 2501 Sur, Nuevo Leon
dc.description.affiliationCenter for Advanced and Sustainable Technologies Sao Paulo State University (UNESP), Sao Joao da Boa Vista, SP
dc.description.affiliationUnespCenter for Advanced and Sustainable Technologies Sao Paulo State University (UNESP), Sao Joao da Boa Vista, SP
dc.format.extent2634-2642
dc.identifierhttp://dx.doi.org/10.1364/AO.452938
dc.identifier.citationApplied Optics, v. 61, n. 10, p. 2634-2642, 2022.
dc.identifier.doi10.1364/AO.452938
dc.identifier.issn2155-3165
dc.identifier.issn1559-128X
dc.identifier.scopus2-s2.0-85127164152
dc.identifier.urihttp://hdl.handle.net/11449/223720
dc.language.isoeng
dc.relation.ispartofApplied Optics
dc.sourceScopus
dc.titleNumerical analysis of pulsing regimes near static borders of optically injected semiconductor lasersen
dc.typeArtigo

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