Projeto de amplificadores operacionais de transcondutância utilizando SOI FinFETs tensionados
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2023-05-25
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Universidade Estadual Paulista (Unesp)
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Visando circuitos com maiores performances e ocupando uma menor área, neste trabalho estudou-se o comportamento de um Circuito Operacional de Transcondutância projetado com SOI FinFETs tensionados. Para este estudo, foram utilizados transistores do tipo pFinFET e nFinFET com diferentes tamanhos de comprimento de canal, e também foram considerados dispositivos com canal tensionados e não tensionados. Sabe-se que o tensionamento mecânico tem como finalidade melhorar a mobilidade de elétrons e lacunas, porém além da mobilidade este tensionamento ocasiona alterações nos principais parâmetros dos dispositivos como: tensão limiar, inclinação sublimar, corrente de dreno, transcondutância e eficiência do transistor. Esses parâmetros estão ligados diretamente com o desempenho do circuito Amplificador Operacional de transcondutância (OTA) projetado, assim foi analisado de maneira comparativa o desempenho do OTA projetado com transistores tensionados e não tensionados. Três abordagens foram levadas em consideração para uma melhor análise comparativa do projeto do OTA considerando o tensionamento mecânico uniaxial: OTA projetado com FinFETs não tensionados, OTA projetado com FinFETs tensionados, mas considerando mesma corrente de polarização e OTA projetado com FinFETs tensionados considerando a mesma condição de inversão, onde a referência foi sempre o FinFET não tensionado. É válido ressaltar que estas análises foram feitas utilizando dispositivos com dois tamanhos de canais diferentes, 900nm e 150nm. A análise foi feita para avaliar a eficácia do tensionamento em diferentes tamanhos de comprimentos de canal e se o tensionamento mecânico é realmente uma técnica eficaz ao se tratar de circuitos analógicos operando com dispositivos nanométricos.
Aiming at circuits with higher performances and occupying a smaller area, this work studies the behavior of a Transconductance Operating Circuit being designed with strained SOI FinFETs. For this study, pFinFET and nFinFET type transistors with different channel length sizes of devices were used, and devices unstrained and strained channels were also considered. It is known that mechanical stress aims to improve the mobility of electrons and holes, but in addition to mobility this stressing causes changes in the main parameters of the devices such as: threshold voltage, subthreshold slope, sleigh current, transconductance and transistor efficiency. These parameters are directly linked to the performance of the designed Operational Transconductance Amplifier (OTA) circuit, so the performance of the OTA designed with unstrained and strained transistors was comparatively analyzed. Three approaches were taken into account for a better comparative analysis of the OTA design considering uniaxial mechanical stressing: OTA designed with unstrained FinFETs, OTA designed with FinFETs strained, but considering the same polarization current and OTA designed with FinFETs strained considering the same condition of inversion, where the reference is always the unstrained FinFET. It is worth noting that these analyzes were performed using devices with two different channel sizes, 900nm and 150nm. These analysis was made to evaluate the effectiveness of mechanical stress in different sizes of channel lengths and if mechanical mechanical stress is really an effective technique when dealing with analog circuits operating with nanometric devices.
Aiming at circuits with higher performances and occupying a smaller area, this work studies the behavior of a Transconductance Operating Circuit being designed with strained SOI FinFETs. For this study, pFinFET and nFinFET type transistors with different channel length sizes of devices were used, and devices unstrained and strained channels were also considered. It is known that mechanical stress aims to improve the mobility of electrons and holes, but in addition to mobility this stressing causes changes in the main parameters of the devices such as: threshold voltage, subthreshold slope, sleigh current, transconductance and transistor efficiency. These parameters are directly linked to the performance of the designed Operational Transconductance Amplifier (OTA) circuit, so the performance of the OTA designed with unstrained and strained transistors was comparatively analyzed. Three approaches were taken into account for a better comparative analysis of the OTA design considering uniaxial mechanical stressing: OTA designed with unstrained FinFETs, OTA designed with FinFETs strained, but considering the same polarization current and OTA designed with FinFETs strained considering the same condition of inversion, where the reference is always the unstrained FinFET. It is worth noting that these analyzes were performed using devices with two different channel sizes, 900nm and 150nm. These analysis was made to evaluate the effectiveness of mechanical stress in different sizes of channel lengths and if mechanical mechanical stress is really an effective technique when dealing with analog circuits operating with nanometric devices.
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Amplificadores operacionais, Microeletronica, Nanotecnologia, Transistores de efeito de campo